Detailed both-sides TOPCon 1D cell
Demonstrates detailed 1D drift-diffusion modeling of a both-sides SiO2 + poly-Si TOPCon cell, contrasting metal-like and analytic band-bending transport layers.
This example demonstrates detailed full drift-diffusion modeling of a TOPCon cell with SiO2 + poly-Si contacts on both sides, using the 1D solver to capture how the polysilicon layers influence band-bending and recombination in the crystalline-silicon bulk. It contrasts two transport-layer approaches.
The front side uses a metal-like transport layer for the n-type poly-Si, setting the workfunction to define a constant Fermi level with empirical barrier-height values, and includes a direct-tunneling model that explicitly represents the oxide between the transport layer and the silicon surface. The rear side uses the analytic band-bending transport-layer type for the p-type poly-Si, which additionally accounts for band-bending within the poly-Si layer via an analytical model (requiring material-property definitions). The analytic approach is physically more complete but cannot currently be combined with an explicit oxide layer.
What this example covers:
- Detailed 1D drift-diffusion modeling of a both-sides SiO2 + poly-Si TOPCon cell
- A metal-like front transport layer with workfunction/barrier height and a direct-tunneling oxide model
- An analytic band-bending rear transport layer and its trade-off vs. explicit oxide modeling
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