ISE TOPCon
Builds a skin with a transport layer to enable the MIS model, modeling Fraunhofer ISE's former 25.7% TOPCon record cell with band-bending and oxide tunneling.
This example shows how to set up a skin configuration with a transport layer to activate Quokka3’s advanced MIS model, which resolves band-bending in the c-Si wafer and direct tunneling through an insulator. The modeled device is a TOPCon cell — Fraunhofer ISE’s former 25.7%-efficiency record cell.
It presents both the detailed MIS model (with resolved band-bending and a non-ohmic tunnel-oxide resistivity) and a simplified lumped-skin MIS variant using a lumped recombination parameter (J0skin), following A. Richter et al., SOLMAT 2017.
What this example covers:
- Activating the MIS model via a transport-layer skin configuration
- Resolving band-bending and direct tunneling through the tunnel oxide
- A simplified lumped-skin MIS variant using J0skin
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